Base Configuration
 
  • 6 Metal Organic Precursor Sources
  • Hazardous Precursor Containment with Smoke Detection
  • Heated In-Situ Abatement System
  • Precursor Manifold Heating up to 200 °C
  • Precursor Source Chilling down 15 °C below Ambient
  • Substrate Heating up to 500 °C
  • Height Adjustable Substrate Holder
  • Automated Lift Pins and Single Wafer Handling
  • Foreline Pump or Customer Provided
  • Individual Pressure Control of all Manifold Inlets
  • Chamber Heating up to 200 °C
  • E95 Compliant HMI with data and alarm logging
  • 3 Millisecond Fast Valve Actuation
  • Standard Turnkey Processes for Al2O3, TiO2, ZnO, and more!
  • External Outputs and Inputs for Facility Alarming
  • Base Vacuum 10^-4 Torr Al2O3, TiO2, ZnO, and more!
  • External Outputs and Inputs for Facility Alarming
  • Base Vacuum 10^-4 Torr
 
Ultra Fast Deposition With Forge Nano’s Patented SMFD-ALD™

Example Chemistries:

Al2O3, SiO2, AZO, TiO2, GaN, TiN, Bi2O3, Pt, Co, Cu, Ta2O5, Hf2O3, MLD

Example Applications:

Copper Barrier, ALD-Cap, Optical, Adhesion/Seeding, TCOs


 
Upgrades
  • Heated Precursor Sources (up to 4)
  • In-Situ QCM Monitoring of Film Growth
  • On-Demand Ozone Generation and Integrated Destruct
  • Remote RF Plasma with 2 Forming Gas Inputs
  • Toxic Gas Enclosure and Manifold Line (For H2S or Similar)
  • External Hazardous Gas Sensors
  • 100mm Substrate Chamber Height
  • Automated Load-Lock
  • Specialty Substrate Carriers (Designed Upon Request)
  • Glovebox Integration (via Load-Lock)