• Thick film deposition ( >1 micron)
  • Short ALD cycle times (0.4-1 sec)
  • Low temperature processing (down to 80 °C)
  • 100% conformal films over any substrate topology
  • Seamless incorporation of nano-laminates with reproducible atomic-layer control
  • Composite ternary and quaternary alloy films with no throughput penalty

Specifications
  • Temperature Window: 50 – 500 °C
  • Liquid Chemical Inlets: Up to 8
  • Gaseous Chemical Inlets: Up to 4
  • Footprint: 66″ L x 46″ W x 80″ H 
  • Capacity: Up to 200mm wafers
  • Substrate Handling: Automated dual cassette