Device-, pattern-, film-independent heating by heat conduction through gas:
      -No pattern effect
      -Heats up SOI wafers, and bulk Si wafers
      -Emissivity independent annealing      
                                                       
       Capabilities:
      -Reproducible and reliable operation down to 200°C
      -Supports wafers with large bow
      -Max temp 1100 °C
      -Compatible with 200 mm and 300 mm wafers
      -Anneal with: N₂, Ar, He, O₂, NH₃, forming gas (FG) and H₂     
                                 
      Value of Ownership:
     -High throughput up to 120 wfrs/hr
     -Lowest cost of ownership compared to lamp system
     -High uptime (≥ 95%) and low maintenance times
     -Lowest number of setup and test wafers
     -Smallest footprint
     -Lower thermal budget compared to lamp system          
                                         
      Ease of Use:
     -Quick and easy tune-in to the process of record
     -Fast, repeatable and inherently uniform heat-up and cool-down
     -Precise temperature control <1°C, no overshoot
     -Zero physical contact during heating, guaranteeing lowest possible stress no scratching
     -No temperature stabilization step.
     -No purge time 
                           
     Application spotlight:
    -Silicidation
    -Ohmic contact anneal
    -Dopant activation
    -CVD pre/post treatment
    -Stress relieving (BPSG)
    -High temperature cleaning
    -Nitridation by N2 and NH3 anneal (contact barrier/HKMG)
    -Copper reduction by annealing in Hydrogen
    -Oxidation
    -Oxidation in 100% water