Product features:
   
  Device-, pattern-, film-independent heating by heat conduction through gas:
● No pattern effect
● No need to remove back-side films
● Heats up SOI wafers and bulk Si wafers without warping and breakage
   
  Low temperature capabilities::
● Reproducible and reliable operation below 200°C
   
  Value of Ownership:
● High throughput, which can exceed 60 wfrs/hr per chamber
● Lowest cost for consumables and spares, no lamps, no rotation
● Lowest number of setup and test wafers
● Smallest footprint
● Most energy efficient (steady state <6 kW peak<20 kW)
   
  Ease of Use:
● Quick and easy tune-in to the process of record
● Reliable and fast tool to tool calibration
● Same temperature settings for same target temperature no lamp correction tables or adjustment software
● Fast, repeatable and inherently uniform heat-up and cool-down
● No overshoot, simple temperature control guaranteeing best reproducibility < 1°C
● Zero physical contact during heating, guaranteeing lowest possible stress no scratching
   
  Product spotlight:
● Oxidation
● Silicidation
● RTP for LED