BENEFITS
  • Customize chamber and electrode RIE (Reactive Ion Etch) Semiconductor Lead Frame magazines and rotating horizontal and vertical electrodes.
  • A generously sized active processing surface ,our standard configuration of five levels of processing shelves provides you with 2100 square inches of useable plasma processing area
  • The vacuum pump is available with a two point N2 purge system to mitigate the formation of corrosive end products in the pump thus extending the service life and reducing the maintenance cycle of systems using Halogenated gasses.
 
SYSTEM FEATURES
  • Welded aluminum chamber measuring 25&rdquow, 25&rdquod and 21&rdquoh
  • 5 Horizontal processing electrodes 20&rdquo x 21&rdquo on 3&rdquo spacing
  • 600 Watts R.F. Generator@ 13.56 MHz Automatic matching network
  • One 500 SCCM Mass Flow Controller
  • Pirani Vacuum Gauge 0-1 Torr
  • Microprocessor System w/ Touch Screen interface
  • Stores up to 20 two step recipes
  • 29 CFM Oxygen Service Vacuum Pump w/ 3 Micron Oil Filtration.
Option
  • Electrostatic Shielding
  • Process Temperature Control
  • 1250 Watt RF Generator @13.56MHz
  • 59 CFM Oxygen Service Vacuum Pump
  • 355 CFM Vacuum Booster Blower
  • RIE (reactive ion electrode) configurations
  • Low Supply pressure Gas Alarms
  • Microsoft Computer Control System w/ Touch Screen Interface
  • Intuitive plasma etch operating software w/Data Reporting, Event monitoring, Printing
  • Signal Light Tower | Active Vacuum Controller | 4 Mass Flow Controllers
  • Automatic 2 point N2 Vacuum Pump Purge | Controlled Rate N2 Chamber Purge
  • Vacuum pump exhaust Oil Mist coalescing filter
  • Custom Chambers and Electrodes for your requirement
 
APPLICATIONS
  • Surface modification