ProSys Megasonic
ProSys Megpie Transducer
Model:
The Sapphire MegPie™ is a single-wafer Megasonic transducer for cleaning and sonochemical processing. It applies a uniform dose of acoustic energy to a rotating substrate. The MegPie will improve process efficiency and lower process time. It is easy to retrofit to your single-substrate processing tool.
•Particle-neutral sapphire resonator – no particles added to theprocess
•Patented crystal bond to the resonator
•Patented RF connection to the crystal
•Redundant internal RTD temperature monitoring
•Available in 100mm to 450mm+
•Custom sizes available
•Sapphire resonator compatible with all processing chemistries
•Uniform direct acoustic energy applied to the process
•Increased process efficiency
•Reduced process time
•Reduced process chemistry usage
•No moving parts to maintain
•No consumables – works better than brushes
•Particle-neutral sapphire resonator – no particles added to theprocess
•Patented crystal bond to the resonator
•Patented RF connection to the crystal
•Redundant internal RTD temperature monitoring
•Available in 100mm to 450mm+
•Custom sizes available
•Sapphire resonator compatible with all processing chemistries
•Uniform direct acoustic energy applied to the process
•Increased process efficiency
•Reduced process time
•Reduced process chemistry usage
•No moving parts to maintain
•No consumables – works better than brushes
Technical Specification:
• Power density: 0.05 – 2.0 Watts/cm2
• Standard operating frequency: 925 kHz; other frequencies available on request
• Mounting height: 0.02? – 0.14? (0.5mm – 3.5mm)
• Process fluid temperature: 15°C – 60°C
• Process fluid required depends on the substrate size and RPM:
0.5 – 3.0 lpm
• Operating RPM: 1–100
• Nitrogen or CDA purge: 10 lpm
• Mounting with 3 x M6 female threaded bosses
• Use with IMPulse RF electronics
Processes Supported:
• Post-CMP cleaning
• TSV
• Pre-SOIC bond cleaning
• SU-8 develop
• Lift off
• Resist strip
• LIGA processes
• Mask cleaning
• Etch assist
• Plating pre-cleaning
• Pre-plating bubble removal
• Post-laser cleaning
• Power density: 0.05 – 2.0 Watts/cm2
• Standard operating frequency: 925 kHz; other frequencies available on request
• Mounting height: 0.02? – 0.14? (0.5mm – 3.5mm)
• Process fluid temperature: 15°C – 60°C
• Process fluid required depends on the substrate size and RPM:
0.5 – 3.0 lpm
• Operating RPM: 1–100
• Nitrogen or CDA purge: 10 lpm
• Mounting with 3 x M6 female threaded bosses
• Use with IMPulse RF electronics
Processes Supported:
• Post-CMP cleaning
• TSV
• Pre-SOIC bond cleaning
• SU-8 develop
• Lift off
• Resist strip
• LIGA processes
• Mask cleaning
• Etch assist
• Plating pre-cleaning
• Pre-plating bubble removal
• Post-laser cleaning