SixPoint Materials, Inc. produces Gallium Nitride (GaN) crystals, a key material for energy, wireless, defense and industrial technologies, with its proprietary NEAT (Near-Equilibrium AmmonoThermal) method. SixPoint's GaN wafer "GANKIBAN" has a lower dislocation density than those produced by the conventional hydride vapor phase epitaxy (HVPE). Our power-grade GANKIBAN enables a GaN-on-GaN platform for high-power devices used in power electronics, RF devices used in wireless and defense applications, high-power laser diodes used in industrial and defense fields, and light emitting diodes (LEDs) for energy-saving solid-state lighting (SSL).